氧化速率---Revisit-18229SOLAR.pptVIP

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  • 2016-12-16 发布于天津
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Thickening Rate of SiO2 半導體專題實驗期末報告 第十組 電機四 許恭銓 電機四 王彥翔 The diamond structure of Si * Planes that are concerned * Actual Photographs 100 110 111 * Molecular arrangements * Molecular density (100): (110): (111): Thus here the molecular density is (110) (100) (111) * Si crystal orientation * Si crystal orientation (cont.) * Distance between layers (100): (110): (111): Hence the distance between two layers: (110) (111) (100) Thus if the oxidation rate on each plane, concerning the molecular density, is not the dominant factor, t

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