9178b.com EDF8132A1MC EDFA232A1MA 178b_30nm_mobile_lpddr3 edf.docVIP

9178b.com EDF8132A1MC EDFA232A1MA 178b_30nm_mobile_lpddr3 edf.doc

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9178 EDF8132A1MC EDFA232A1MA 178b_30nm_mobile_lpddr3 edf 178-Ball Mobile LPDDR3 SDRAM Features Mobile LPDDR3 SDRAM EDF8132A1MC, EDFA232A1MAFeatures ?Ultra-low-voltage core and I/O power supplies?Frequency range –800 MHz (data rate: 1600 Mb/s/pin)?8n prefetch DDR architecture ?8 internal banks for concurrent operation ?Multiplexed, double data rate, command/addressinputs; commands entered on each CK_t/CK_cedge ?Bidirectional/differential data strobe per byte ofdata (DQS_t/DQS_c) ?Programmable READ and WRITE latencies (RL/WL)?Burst length: 8 ?Per-bank refresh for concurrent operation?Auto temperature-compensated self refresh(ATCSR) by built-in temperature sensor?Partial-array self refresh (PASR)?Deep power-down mode (DPD) ?Selectable output drive strength (DS)?Clock-stop capability ?On-die termination (ODT) ?Lead-free (RoHS-compliant) and halogen-freepackaging Options ?VDD1/VDD2/VDDCA/VDDQ: 1.8V/1.2V/1.2V/1.2V?Array configuration–256 Meg x 32 (DDP)–512 Meg x 32 (QDP)?Packaging –12.0mm x 11.5mm, 178-ball FBGA package–13.0mm x 11.5mm, 178-ball FBGA package?Operating temperature range–From –30°C to +85°C Table 1: Configuration Addressing – Single-Channel Package PDF: 09005aef858e9dd3 178b_30nm_mobile_lpddr3.pdf – Rev. A 3/14 EN1 Products and specifications discussed herein are subject to change by Micron without notice. Micron Technology, Inc. reserves the right to change products or specifications without notice. ? 2014 Micron Technology, Inc. All rights reserved. 178-Ball Mobile LPDDR3 SDRAM Features Table 2: Key Timing Parameters Table 3: Part Number Description Figure 1: Marketing Part Number Chart Micron Technology(Micron Japan)Type D = Packaged device Packing Media D = Dry Pack (Tray) R = Tape and Reel Environment Code F = Lead-free (RoHS-compliant) and halogen-free Product Family Density/Chip Select 81 = 8Gb/2-CS A2 = 16Gb/2-CS Speed GD = 1600 Mbps Package MC = Stacked FBGAMA = Stacked FBGA Organization 32 = x32 A = VDD1 = 1.8V, VDD2DDCADDQ S8 device,

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