A presentation to the application of TEM in..pptVIP

A presentation to the application of TEM in materials science Liu Hongwei Department of Physics Nanjing Unversity 2005.04.18 Outlines Introduction Principle of TEM Application of TEM in Materials science Useful massage TEM 结构表征 形态观察 结晶状态 缺陷研究 高分辨研究 前言 纳米材料：非常重要，当前是热点，种类繁多，制备方法多样、功能各异、性能千差万别、用途各不相同。 Characterization of Straight and Zigzag AlN Nanowires Precipitation in TiNiHf high temperature shape memery alloy 高分辨像 Five folder twins in diamond deposited on Silicon surface J. H. Duan, S. G. Yang,* H. W. Liu, J. F. Gong, H. B. Huang, X. N. Zhao, R. Zhang, and Y. W. Du. JPCB. 2005, 109, 3701-3703 TEM image of a typical AlN zigzag nanowire. (a) Low-magnification TEM image of the selected zigzag nanowire. (b) and (c) brightfield and dark-field high-magnification TEM image. (d) HRTEM image of the marked part on the zigzag nanowire in (b) (inset: corresponding electron diffraction (ED) pattern with the zone axis [011h0]). (e) The growth directions are [21h1h1] and [2h111]. The measured angle between [21h1h1] and [0001] is 27.61°. (f) Sketch of hexagonal AlN crystal. The angle between [0001] and [21h1h1] is 28.420 in theory. (g) The growth direction of the zigzag nanowire alternates between [21h1h1] f [2h111]. TEM images of a straight nanowire. (a) and (b) low- and high-magnification image. The diameter of the nanowire is about 60 nm. The inset is an electron diffraction pattern of the marked part with zone axis[011h0]. (c) HRTEM image of the marked part of the nanowire. The measured d spacing is 0.246 nm, which is in accordance with AlN (0002) plane. HRTEM images of another AlN zigzag nanowire. For all AlN zigzag nanowires observed in our experiment, their growth directions shifted from [ ] 2111 to[ ] 2111 . It illustrates the common nature for AlN nanowire changing its growth directions between the equivalent crystal faces to form zigzag morphology in the synthesis. Amorphous SiO2 doped with dispersive ZnFe2O4 Nano Particles Prepared by sol-gel 2. Experimental materi