(精)纳米材料的光学吸收.pptVIP

Analysis of Optical Absorption in Nanowire Arrays for Photovoltaic Applications 2013-11-7 Wang Weiping 1.Finite-difference time-domain (FDTD) simulationsTransfer matrix method (TMM) Analysis of Optical Absorption in Silicon Nanowire Arrays for Photovoltaic Applications Apsorption = 1 - Refectance - Transmittance Geometric parameters: Diameter, Length, Filling ratio Frequency range：1.1~4 eV Fixed diameter: 50 nm Fixed period : 100 nm, wire length : 2.33 um a=100 nm, diameter=80 nm,length=2.33 um Analysis of optical absorption in GaAs nanowire arrays A perfect refractive index matching at the top interface between the air and NWAs, hence leads to good coupling of the incident light into the NWAs Fixed D/P: 0.5, diameters:60~240 nm D/P = 0.5, Length = 2 um, diameter = 180 nm, wavelength = 800nm. 2.Mie resonance theory length=2.5um, diameter=425nm short-circuit current: 256 pA,open circuit voltage:0.43, filling factor: 0.52 photogenerated current density of 180 mA/cm2 maximum power: 57pw; efficiency: 40% Methods-nanowire growth Nanowires were grown on oxidized Si(111) with 100 nm apertures using a self-catalysed method The p-doping of the corewas achieved by adding a flux of beryllium during axial growth The n-type doping was obtained by adding silicon to the growth step Device fabrication SU-8 was spun onto the substrate at 4,000 r.p.m. for 45 s and cured with 1 min ultraviolet light and 3 min on a hotplate at 185oC An etch-back with a 1–3 min oxygen plasma etch wasthen performed to free the nanowire tip The top contact was defined by electron-beam lithography followed by evaporation of indium tin oxide (ITO) The bottom contact was obtained by silver gluing to the back-side of the wafer Optical simulations of a single nanowire solar cell The absorption cross-section is defined as The absorption cross-section in nanoscale materials is larger than their physical size The largest absorption is for a nanowire diameter of 380nm External quant