摘要对IGBT栅极驱动特性栅极串联电阻及其驱动电路进行了探讨提出了慢降栅压过流保护和过电压吸收的有效方法.docVIP

摘要：对IGBT栅极驱动特性、栅极串联电阻及其驱动电路进行了探讨。提出了慢降栅压过流保护和过电压吸收的有效方法。Technology of Drive ＆ Protection Circuit for IGBT Module JIANG Huai-gang, LI Qiao, HE Zhi-wei? Abstract:The gate drive characteristic,the gate series resistance and the drive circuit of IGBT are discussed,and the technique of overcurrent protection by reducing gate voltage slowly is presented.It is also given that effective protective method of overvoltage.? Keywords:Switching power supply; IGBT; Driving protection? 　 1? 引言 ??? IGBT是MOSFET与双极晶体管的复合器件。它既有MOSFET易驱动的特点，又具有功率晶体管电压、电流容量大等优点。其频率特性介于MOSFET与功率晶体管之间，可正常工作于几十kHz频率范围内，故在较高频率的大、