Chapte 19 Basic Semiconductor Physics.pptVIP

Semiconductor Physics - * Copyright ? by John Wiley Sons 2003 Review of Basic Semiconductor Physics 皖扒应顺菊虐部血祭持杖咐逃太闹粳焕敲倚卜永曙驻些往绥利删揉塘街遂Chapte 19 Basic Semiconductor PhysicsChapte 19 Basic Semiconductor Physics Current Flow and Conductivity ? Charge in volume A?x = ?Q = q n A ? x = q n A v?t ? Current density J = (?Q/?t)A-1 = q n v ? Metals - gold, platinum, silver, copper, etc. ? n = 1023 cm-3 ; ? = 107 mhos-cm ? Insulators - silicon dioxide, silicon nitride, aluminum oxide ? n 103 cm-3 ; ?? 10-10 mhos-cm ? Semiconductors - silicon, gallium arsenide, diamond, etc. ? 108 n 1019 cm-3 ; 10-10 ???? 104 mhos-cm 溉渔屯诡厚速兔睫誊局于叹斯尾箱跃沈勺定焦蓑谜亥聘溅肉帆肇讨参胎闭Chapte 19 Basic Semiconductor PhysicsChapte 19 Basic Semiconductor Physics Thermal Ionization ? Si atoms have thermal vibrations about equilibrium point. ? Small percentage of Si atoms have large enough vibrational energy to break covalent bond and liberate an electron. 帜蒸顽能极尧弹避诵义炒从榨易瘪泡痒弱瘁淖琵卡滚略湃系方络喝蔗峪人Chapte 19 Basic Semiconductor PhysicsChapte 19 Basic Semiconductor Physics Electrons and Holes ? T3 T2 T1 ? Density of free electrons = n : Density of free holes = p ? p = n = ni(T) = intrinsic carrier density. ? ni2(T) = C exp(-qEg/(kT )) = 1020 cm-6 at 300 ?K ? T = temp in ?K ? k = 1.4x10-23 joules/ ?K ? Eg = energy gap = 1.1 eV in silicon ? q = 1.6x10-19 coulombs 嵌返飘泞赘帆肖唬强操部烈埋舍皖腾窥蘑谭茁娱给绰沾带痴印扛线吴酿槐Chapte 19 Basic Semiconductor PhysicsChapte 19 Basic Semiconductor Physics Doped Semiconductors ? Extrinsic (doped) semiconductors:p = po ≠ n = no ≠ ni ? Carrier density estimates: ? Law of mass action nopo = ni2(T) ? Charge neutrality Na + no = Nd + po ? P-type silicon with Na ni: po ≈ Na , no ≈ ni2/ Na ? N-type silicon with Nd ni: no ≈ Nd , po ≈ ni2/ Nd 谱万藕涣洁袒囱阔陨旗坍湍聘功眉鹰盲居颧损社勾华倒狠惜煌律崖换狈遥Chapte 19 Basic Semiconductor PhysicsChapte 19 Basic Semiconductor Physics Nonequilibrium and Recombination ? Thermal Equilibrium - Carrier generation = Carrier recombination ? n = no and