PECVD绍.pptVIP

Plasma-enhanced CVD. Lev Berkovich MSE 550 Professor B. Bavarian March 21, 2005 臂丝葡墅钝下蛹此衬不惑座庶垢院泽震鳖焉锋者狸塌底粘纵冠函柔寿喝濒PECVD绍PECVD绍 Plasma-enhanced CVD Relation of PECVD to other processes Typical processes and hardware Specific applications Examples of PECVD modeling software 迢昆辜绒妇聚么尖艳间悍煽囚府巫眯裳抽农捷评明狠饲葵钨淳忍哗铝澄盂PECVD绍PECVD绍 PECVD and other CVD processes. 佯做翟舵歼跌毋缠戈坞恤烤盂檬升譬榴橙射伙悉凰垛讨庇到酞轩锣残插蠢PECVD绍PECVD绍 What is Plasma-enhanced CVD Plasma Enhanced CVD (PECVD) is a process where glow-discharge plasma is sustained in a reaction chamber. This technology was developed to meet a demand from the semiconductor industry to have a low temperature process of silicon nitride films for the passivation and insulation of the complete devices, that could not be exposed to the temperatures that are normal for the CVD ~1000 0C. The most common way to excite the plasma is the RF field. PECVD is mostly used to deposit dielectrics, and therefore the DC excitation will not work. Frequency range is usually from 100kHz to 40MHz. The process does not require a deep vacuum, so the reduced pressure between 50 mtorr to 5 torr is used. The ion density is usually between 109 – 1011 1/cm3 and average electron energies are between 1 to 10 eV. Presence of plasma changes the thermodynamics of surface reactions and considerably lowers the temperature at which reactions are possible. For instance, for TiC the deposition reaction is not thermodynamically possible bellow 1218 0K. However, in a presence of plasma, the reaction is possible at as low as 700 0K. The following table provides a sampling of materials deposited by the PECVD process. 处悯容幌涅族腮荡憎扩夜苛碑贮书围争将胳制管虚触叫篷钱舰灭虱彝示彦PECVD绍PECVD绍 PECVD films, Source gases and Deposition Temperatures 而堰扦转帧训纶哈刑岭奋亡孪哩瘴跳熄缺膏韵椅毒豆喀芋蚀应乓辐藩泅肺PECVD绍PECVD绍 PECVD reactors Tube or tunnel reactor 祸聊哀檄气遭律统茨乏醒叉浓坠蚂喳坚惫癣差骋戍叼茶服暗同书裔痒逞淑PECVD绍PECVD绍 PECVD reactors Reinberg-type cylindrical reactor 丙块课京济只要轻岸惩锈共肮慨懂妥阴员陆锯肾勇赌澡嘲责啦掷痛铜车毡PECVD绍PECVD绍 PECVD reactors ECR plasma deposition reactors 扰利啡糕移阳向