MOSFET 特性介绍课件精品.pptVIP

簡介 - MOSFET MOSFET INTRODUCTION DATA SHEET EXAMPLE DC PARAMETER AC PARAMETER POWER RELATED MOSFET INTRODUCTION MOSFET INTRODUCTION MOSFET DATA SHEET -CEP(B)02N6 MOSFET DATA SHEET -CEP(B)02N6 MOSFET DATA SHEET -CEP(B)02N6 MOSFET 參數特性-DC PARAMETER DC PARAMETER BVDSS (VDS) LEAKAGE(IDSS) BVGSS (VGS) LEAKAGE(IGSS) ON-RESISTANCE (RDSON) THRESHOLD VOLTAGE (VGS(TH)) FORWARD TRANSCONDUCTANCE (GFS) DIODE FORWARD VOLTAGE (VFSD) DC PARAMETER-BVDSS/IDSS DC PARAMETER-BVGSS/IGSS DC PARAMETER-BVGSS/IGSS DC PARAMETER-RDSON Relative contributions to RDS(on) different voltage ratings DC PARAMETER-VTH Formation of inversion layer DC PARAMETER- GFS/VDS MOSFET 參數特性 - AC PARAMETER AC PARAMETER DYNAMIC CHARACTERISTICS CISS , COSS ,CRSS GATE CHARGE QG/QGS/QGD Switching time Ton( Tdon, Tr), Toff( Tdoff, Tf) AC PARAMETER - CISS , COSS ,CRSS AC PARAMETER - QG , QGS , QGD AC PARAMETER - QG , QGS , QGD AC PARAMETER- Ton(Td(on), Tr) Toff(Td(off), Tf) I-V curve at Turn on and Turn off Ring cause Avalanche cause MOSFET 參數特性 – POWER RELATED POWER RELATED POWER DISSIPATION CURRENT RATING MAXIMUM CURRENT REATIHG AVALANCHE POWER RELATED-POWER DISSIPATION POWER RELATED-CURRENT RATING MAXIMUM CURRENT RATING MOSFET 參數特性 – POWER DISSAPATION THANK YOU ! IDM : 為元件所能承受瞬間最大電流. IDM運算法 : 關於IDM值 ,該值乃是根據 RDSON – 溫度曲線圖和熱阻曲線 計算得知. 1.由SINGLE PULSE 300uS代入 FIGURE 得知 R(T)約等於 0.15. 2.R θJC (T) = R θJC * R(T) = 2.1℃/W *0.15 = 0.315 ℃/W 3.PDM = (TJ-TC)/R θJC (T) = (150℃-25℃)/0.315 ℃/W = 396℃/W. 4.IDM = √[PDM/RDSON(max)] = √(396℃/W /10.5Ω) = 6 A . EAS AVALANCHE ENERGY 計算公式如下: EAS = 1/2*L*I*I[V(BR)DSS/(V(BR)DSS-VDD)] = 1/2 *60 mH *2 A *2A * [600/(600-50)]