半导体制备技术简介CH培训教程文件.pptVIP

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm Objectives Give two reasons why silicon dominate List at least two wafer orientations List the basic steps from sand to wafer Describe the CZ and FZ methods Explain the purpose of epitaxial silicon Describe the epi-silicon deposition process. Crystal Structures Amorphous No repeated structure at all Polycrystalline Some repeated structures Single crystal One repeated structure Amorphous Structure Why Silicon? Abundant, cheap Silicon dioxide is very stable, strong dielectric, and it is easy to grow in thermal process. Large band gap, wide operation temperature range. Unit Cell of Single Crystal Silicon Crystal Orientations: 100 Crystal Orientations: 111 Crystal Orientations: 110 100 Orientation Plane 111 Orientation Plane 100 Wafer Etch Pits Dislocation Defects From Sand to Wafer Quartz sand: silicon dioxide Sand to metallic grade silicon (MGS) React MGS powder with HCl to form TCS Purify TCS by vaporization and condensation React TCS to H2 to form polysilicon (EGS) Melt EGS and pull single crystal ingot From Sand to Wafer (cont.) Cut end, polish side, and make notch or flat Saw ingot into wafers Edge rounding, lap, wet etch, and CMP Laser scribe Epitaxy deposition From Sand to Silicon Silicon Purification I Silicon Purification II Electronic Grade Silicon Crystal Pulling: CZ method CZ Crystal Pullers CZ Crystal Pulling Floating Zone Method Comparison of the Two Methods CZ method is more popular Cheaper Larger wafer size (300 mm in production) Reusable materials Floating Zone Pure silicon crystal (no crucible) More expensive, smaller wafer size (150 mm) Mainly for power devices. Ingot Polishing, Flat, or Notch Wafer Sawing Parameters of Silicon Wafer Wafer Edge Rounding Wafer Lapping Rough polished conventional, abrasive, slurry-lapping To remove majority of surface damage To create a flat surface Wet Etch Remove defects from wafer surface 4:1:3 mixture of HNO3 (79 wt% in H2O), HF (49 wt% in H2O)