退火温度对LaAlZnO薄膜结晶特性的影响毕业论文.docVIP

摘 要 ZnO薄膜由于具有优异的光学性能，成为近年来的研究热点。氧化锌(ZnO)是一种直接带隙宽禁带II-VI族化合物半导体材料，其室温下禁带宽度约为3.37eV，激子束缚能高达60meV，远高于室温下的热离化能(26meV)，ZnO中的激子能够在室温下稳定存在，并且可以产生很强的光致激子紫外发射，非常适于制备室温或更高温度下低阈值、高效率受激发射器件。由于ZnO在结构、电学和光学性质等方面有很多优点，并且ZnO薄膜的制作方法很多，如磁控溅射(Magnetron Sputtering)、脉冲激光沉积(PLD)、金属有机物化学气相沉积(MOCVD)、喷雾热解(SP)、分子束外延(MBE)等，使其在光探测器、表面声波器件、透明电极、太阳能电池等光电子器件领域有很大的发展前景。不同元素掺杂于ZnO，可以改善其光学性能。而制备高质量掺杂的ZnO薄膜对于实现以上的这些应用具有重要意义。 本文按照一定配比制备了LaAlZnO靶材，并采用磁控溅射法在170W的溅射功率下制备薄膜样品。对样品在不同退火条件下进行XRD测定。讨论退火温度对原子间距和结晶性能的影响等性质的影响。具体内容如下： 利用磁控溅射法在盖玻片衬底上沉积了LaAlZnO薄膜，生长温度为400℃,溅射后对薄膜进行了400℃、500℃和570℃退火处理。利用X射线衍射(XRD)对薄膜进行测试，测试结果：LaAlZnO薄膜样品在500℃和570℃退火时具有良好的（002）C轴择优取向性。在一定温度范围内随退火温度的升高，（002）,从而使晶体质量变好。 关键词：ZnO薄膜；磁控溅射；XRD；结晶性能；退火处理 Abstract Because ZnO films have excellent optical performance, so it becomes a popular topic in recent time. ZnO has attracted great interest for its wide band gap (3.37eV) and relatively large exciton binding energy (60meV) at room temperature (RT). It has been regarded as one of the most promising candidates for the next generation of ultraviolet (UV) light-emitting diodes (LED) and lasing devices(LD) operating at high temperatures and in harsh environments.Because of the advantages in structure, electrical and optical propertie as wel as various methods for synthesizing ZnO thin films, such as megnetron sputtering, pulsed laser deposition, metal-organic chemical vapor deposition, spray pyrolysis, molecular beam epitaxy.etc. methods, ZnO thin films have widely applications in photodetectors, surficial acoustic devices, transparent electrodes, solar cells and so on. Doping different elements into ZnO can improve the optical properties ,and preparation of high-quality doped ZnO films achieving these applications becomes more significant. This article prepareds LaZnO target in accordance with a certain ratio,and using magnetron sputtering method prepared film samples under the sputtering power 170W . The samples is measured by XRD under different annealing conditions. Discuss the imp