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where the integral is over a closed surface. Q T iS the total charge enclosed by the s~face, and En is the outward-directed normal component of the electric field crossing the surface S. Gausss law will be applied to the surface defined in Figure 6.61. Since the surface must be enclosed, we must take into account the two end surfaces in the x-y plane. However, there is no z component of the electric field so these two end surfaces do not contribute to the integral of Equation (6.69) Now consider the surfaces labeled 1 and 2 in Figure 6.61. From the gradual channel approximation, we will assume that Ex is essentially a constant along the channel length. This assumption means that Ex into surface 2 is the same as Ex out of surface 1. Since the integral in Equation (6.69) involves the outward component of the E-field, the contributions of surfaces 1 and 2 cancel each other. Surface 3 is in the neutral p-region, so the electric field is zero at this surface. Surface 4 is the only surface that contributes to Equation (6.69). Taking into account the direction of the electric field in the oxide, Equation (6.69) becomes where Box is the permittivity of the oxide. The total charge enclosed is Combining Equations (6.70) and (6.71), we have We now need an expression for Boxy Figure 6.62a shows the oxide and chanter ~ We will assume that the source is at ground potential. The voltage Vie is the potential In the channel at a point x along the channel length. The potential difference across the oxide at x is a function of VGS, Vx, and the metal-semiconductor work function difference. The energy-band diagram through the MOS structure at point x is shown in Figure 6.62b. The Fermi level in the p-type semiconductor is EFP and the Fermi level in the metal is EFm. We have Considering the potential barriers, we can write which can also be written as where Ems is the metal semiconductor work function difference, and As?l~FPI for the inversion condition. The elec