氮化物光伏电池的制备和特性研究.docVIP

GaN基半导体光伏电池的制备和特性研究 蔡晓梅1, 张江勇2，吕雪芹3，应磊莹2，张保平2* ( 1集美大学理学院物理系，福建 厦门，361021，2厦门大学信息学院电子系，3厦门大学萨本栋微纳米技术研究院，厦门，361005 ) *通信作者：bzhang@， 基金项目：国家自然科学基金61274052），集美大学科研启动金（）低In组分的InGaN p-i-n同质结太阳能电池，良好的光伏响应特性，InGaN p-i-n异质结太阳能电池InGaN多量子阱结构电池，指出合理设计器件结构是今后研究的关键，为进一步的发展提供思路。Fabrication and Characteristics of GaN-based Solar Cells CAI Xiao-mei1, ZHANG Jiang-yong2, LV Xue-qin3, YING Lei-ying2, ZHANG Bao-ping2* (1 Department of Physics, School of Science, Jimei University, Xiamen, China, 2 Department of Electronic Engineering, Xiamen University, Xiamen, China, 3Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen 361005, China) Abstract：Three kinds of InxGa1-xN p-i-n homojunction (HOJ) solar cells (SCs) with comparatively low In contents are fabricated and demonstrated to show excellent photo-response characteristics. Possible mechanisms for the dramatic decrease of open-circuit voltage (Voc) with increasing In content are discussed. For comparison, heterojunction (HEJ) SCs are also fabricated and investigated. Through comparing HOJ and HEJ SCs, we proposed that HEJ structure is a better candidate for InGaN SCs. In order to broaden the response range to the solar spectrum, SCs with InGaN/GaN multiple quantum well (MQW) as the absorption region is proposed and optimal design of the device structure is found to be of great importance. These results provide useful references for the future research. Key words：InGaN；solar cell；structure 单晶Si太阳能电池得到广泛的应用然而由于材料特性上的限制，晶体Si电池的效率基本已达到极限，进一步提升空间很有限，。根据理论计算单晶Si电池的效率也只有30%，因此Si材料很难在高效率太阳能电池方面发展。高效太阳能电池主要为第二代半导体InGaAsP系列材料，且已在航空航天工业中得到广泛应用，单结GaAs太阳能电池的转换效率达到27.6%。为了取得更高的转换效率，不同带隙材料多结太阳能电池，使其每一结子电池吸收相应的太阳光。效率最高的InGaP/GaAs/InGaAs[1]，GaInP/GaInAs/Ge[2]和GaInP/GaAs/GaInNAs[3]三结电池，转换效率可达到41.6%～44%，为了更进一步提高太阳能电池的效率，需要增加多结太阳能电池的结数目，使其子电池能更有效地吸收太阳光。根据[4]，电池结数目越多，效率越高，需要具有不同带隙材料种类将越多，且顶部子电池的带隙也越大（如5结电池顶部子电池的带隙为2.68 eV）。为了取得效率大于50%的太阳能电池，必需寻求满足多结电池带隙要求且具有良好光伏特性的新型材料。近年来，半导体InGaN材料以其优越的光伏特性，吸引人们探索其在太阳能电池方面的应