半导体物理与器件课后答案第10章.pdf

Semiconductor Physics and Devices: Basic Principles, 3rd edition Solutions Manual Chapter 10 Problem Solutions Chapter 10 Problem Solutions iE = 17.64 mA 10.1 Sketch 10.2 Sketch 10.3 b g b gb g(a) IS = eDn ABE nBO xB 1.6x10?19 (20) 10?4 104 = 10?4 or I S = 3.2 x10?14 A HF KI(b) (i) iC = 3.2 x10?14 exp 0.5 0.0259 ? FH KIiC = 7.75 μA (ii) iC = 3.2 x10?14 exp 0.6 0.0259 ? FH IKiC = 0.368 mA (iii) iC = 3.2 x10?14 exp 0.7 0.0259 ? iC = 17.5 mA 10.4 (a) β = α = 0.9920 ? β = 124 1 ? α 1 ? 0.9920 (b) From 10.3b (i) For iC = 7.75 μA ; iB = iC β = 7.75 ? 124 iB = 0.0625 μA , HGF IJK FH IKiE = 1+ β β ? iC = 125 (7.75) ? 124 iE = 7.81 μA (ii) For iC = 0.368 mA , iB = 2.97 μA , iE = 0.371 mA (iii) For iC = 17.5 mA , iB = 0.141 mA , 10.5 (a) β= iC 510 =? β = 85 iB 6 α= β 85 =? α = 0.9884 1 + β 86 iE = iC + iB = 510 + 6 ? iE = 516 μA (b) 2.65 β= ? β = 53 0.05 53 α= ? α = 0.9815 54 iE = 2.65 + 0.05 ? iE = 2.70 mA 10.6 (c) For iB = 0.05 mA , iC = βiB = (100)(0.05) ? iC = 5 mA We have vCE = VCC ? iC R = 10 ? (5)(1) or vCE = 5 V 10.7 (b) VCC = IC R + VCB + VBE so 10 = IC (2) + 0 + 0.6 or IC = 4.7 mA 10.8 b g(a) n pO = ni2 NB = 1.5x1010 1016 2 = 2.25x104 cm?3 At x = 0 , FGH JKInp(0) = npO exp VBE Vt or we can write FGH IJKVBE = Vt ln np (0) n pO 139 Semiconductor Physics and Devices: Basic Principles, 3rd edition Solutions Manual Chapter 10 Problem Solutions We want nP (0) = 10% × 1016 = 1015 cm?3 , So HFG JIKVBE = (0.0259)ln 1015 2.25x104 or VBE = 0.635 V (b) At x′ = 0 , FHG KJIpn(0) = pnO exp VBE Vt b gwhere pnO = ni2 NE = 1.5x1010 2 1017 = 2.25x103 cm?3 HF IKThen pn (0) = 2.25x103 exp 0.635 0.0259 ? pn (0) = 1014 cm?3 (c) From the B-C space charge region, NLM a fFHG KJIHGF KJIOQPxp1 = 2 ∈ Vbi + VR1 e NC NB 1 NC + NB 1/ 2 We find NLMMbb gb g gOPQPVbi1 = (0.0259)ln 1016 1015 1.5x1010 2 = 0.635 V Then MLN b gxp1 = 2(11.7) 8.85x10?14 (0.635 + 3) 1.6 x10 ?19 F IF IO1015 HG JKH KPQ× 1016 1 1015 + 1016 1/ 2 or x p1 = 0.207 μm We find LNMMbb gb g gOPQPVbi2 = (0.0259)ln 1017 1016 1.5x1010 2