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ARTICLE IN PRESS Physica B 404 (2009) 4626–4629 Contents lists available at ScienceDirect Physica B journal homepage: /locate/physb X-ray diffraction on precipitates in Czochralski-grown silicon O. Caha ?, M. Medunˇ a Department of Condensed Matter Physics, Masaryk University, Kotlarˇska 2, CZ-61137 Brno, Czech Republic article info PACS: 61.72.Dd 61.72.Cc 61.72.uf Keywords: Silicon X-ray diffraction Precipitates abstract The results of a study of oxygen precipitates in Czochralski grown silicon are reported. High-resolution X-ray diffraction was used to measure reciprocal space maps on samples after various annealing treatment. The measurements were performed for several diffraction orders and systematic differences between reciprocal space maps around different diffractions were found. The diffuse X-ray scattering intensity was simulated, where the displacement ?eld of precipitates was calculated using continuum elasticity theory. The simulations give correct asymptotic behavior and the interpretation of intermediate region between Huang and core scattering processes is found. The X-ray diffraction results are correlated to the infrared absorption spectroscopy measurement involving the interstitial oxygen concentration. 2009 Elsevier B.V. All rights reserved. 1. Introduction Structural quality of semiconductor wafers and epitaxial layers is an important parameter substantially in?uencing their electrical properties and the performance of fabricated integrated circuits. A reliable control of the defect nucleation and growth during the semiconductor technology is an important issue, since the defects may affect detrimentally the electric parameters of the semiconductor structures. However, they can also be bene?cial, since they can getter out impurities, especially heavy metal atoms. Silicon wafers pass through the series of thermal operations during the production technology of integrated circuits thus the oxygen precipitation plays an important role. The X-ray