Radiation Effects on Emerging Electronic Materials and Devices新兴电子材料与器件的辐射效应.pptVIP

Radiation Effects on Emerging Electronic Materials and Devices新兴电子材料与器件的辐射效应.ppt

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Radiation Effects on Emerging Electronic Materials and Devices新兴电子材料与器件的辐射效应

Radiation Effects on Emerging Electronic Materials and Devices Ron Schrimpf Vanderbilt University Institute for Space and Defense Electronics Team Members Vanderbilt University Electrical Engineering: Dan Fleetwood, Marcus Mendenhall, Lloyd Massengill, Robert Reed, Ron Schrimpf, Bob Weller Physics: Len Feldman, Sok Pantelides Arizona State University Electrical Engineering: Hugh Barnaby University of Florida Electrical and Computer Engineering: Mark Law, Scott Thompson Georgia Tech Electrical and Computer Engineering: John Cressler North Carolina State University Physics: Gerry Lucovsky Rutgers University Chemistry: Eric Garfunkel, Evgeni Gusev Institute for Space and Defense Electronics Resource to support national requirements in radiation effects analysis and rad-hard design Bring academic resources/expertise and real-world engineering to bear on system-driven needs ISDE provides: Government and industry radiation-effects resource Modeling and simulation Design support: rad models, hardening by design Technology support: assessment, characterization Flexible staffing driven by project needs Faculty Graduate students Professional, non-tenured engineering staff Radiation Effects on Emerging Electronic Materials and Devices More changes in IC technology and materials in past five years than previous forty years SiGe, SOI, strained Si, alternative dielectrics, new metallization systems, ultra-small devices… Future space and defense systems require understanding radiation effects in advanced technologies Changes in device geometry and materials affect energy deposition, charge collection, circuit upset, parametric degradation… Approach Experimental analysis of radiation response of devices and materials fabricated in university labs and by industrial partners First-principles quantum mechanical analysis of radiation-induced defects ? physically based engineering models Development and application of a fundamentally new multi-scale simulation approach Validation of

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