【物理】半导体物理.pptVIP

Wen Chang Huang chapter 2 Chapter 2 Energy bands and carrier concentration in thermal equilibrium Energy bands and carrier concentration in thermal equilibrium Semiconductor materials Basic crystal structure Basic crystal growth technique Valence bands Energy bands Intrinsic carrier concentration Donors and acceptors Semiconductor materials Element semiconductors Germanium In the early 1950s, was the major semiconductor material Silicon Better device properties High quality silicon dioxide Cheaper abundant Compound semiconductors Basic crystal structure Single crystal The atoms are arranged in three dimensional periodic fashion Lattice The periodic arrangement of atoms in a crystal In a crystal, an atom never strays far from a single, fixed position Unit cell Is representative of the entire lattice Unit cell R=na+nb+pc R: lattice point Basic cubic-unit cells Simple cubic Has an atom at each corner Each atom has six equidistant nearest-neighbor atoms Lattice constant: a Polonium 釙 Body centered cubic Additional an atom at the center Each atom has eight nearest-neighbor atoms Sodium, tungsten Face-centered cubic Additional an atom at each face Each atom has 12 nearest-neighbor atoms Aluminum, copper, gold and platinum Simple cubic FCC example1 The diamond structures The element semiconductors Silicon and germanium Belongs to fcc crystal family Two interpenetrating fcc sublattices with one sublattice displaced from the other by one-quarter of the distance along the body diagonal of the cubic A displacement of A unit cell of a diamond lattice consists of a tetrahedron