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Performance improvement of organic thin film transistors with carbon nanotubemetal hybrid electrodes for SD contacts.pdf

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Performance improvement of organic thin film transistors with carbon nanotubemetal hybrid electrodes for SD contacts.pdf

Organic Electronics 36 (2016) 153e159 Contents lists available at ScienceDirect Organic Electronics journal homepage: /locate/orgel Performance improvement of organic thin ?lm transistors with carbon nanotube/metal hybrid electrodes for S/D contacts Yuseon Jeong a, Jinwook Jeong a, Ho Young Kim b, Hee Jin Jeong b, Chung Kun Song a, * a Dept. Electronics Eng., Dong-A University, Busan, 49315, Republic of Korea b Nano Carbon Materials Research Group, Korea Electrotechnology Research Institute, Changwon, 51543, Republic of Korea article info Article history: Received 26 April 2016 Received in revised form 28 May 2016 Accepted 31 May 2016 Available online 13 June 2016 Keywords: Contact resistance OTFTs Carbon nanotube Hybrid electrode Source and drain electrodes Pentacene TFTs abstract Electrode contact resistance is an important factor that seriously affects the performance of organic thin ?lm transistors (OTFTs). In this paper, new low contact resistance carbon nanotube (CNT) based hybrid electrodes are introduced for the source and drain electrodes of OTFTs. The hybrid electrodes consist of solution-processed CNTs and a metal (Al; CNT/Al or Au; CNT/Au) layer evaporated on the CNTs. The contact resistance of the CNT/Al and CNT/Au hybrid electrodes was found to vary depending on the thickness of the Al and Au layer. The contact resistance of the CNT/Al hybrid electrodes exhibited a minimum of 2.9 kU cm at an Al thickness of 5 nm. It is notable that the minimum contact resistance of the CNT/Au was 0.9 kU cm at an Au thickness of 5 nm, and is the lowest value ever reported. It was lower than the 13 kU cm of the bare CNT electrodes, and tremendously less than the 4 MU cm of the pure Au electrode. The mobility of the OTFTs, which used pentacene as the semiconductor and polyvinylphenol as the gate dielectric, also followed the same dependence on metal thickness as the contact resistance. The maximum mobility of the OTFTs using CNT/Al and CNT/Au electrodes was 0.76 cm2/V sec