Recombination Behavior of Photolithography-free Back Junction Back Contact Solar Cells with Carrier-selective Polysilicon on Oxide Junctions for Both Polarities.pdfVIP

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Recombination Behavior of Photolithography-free Back Junction Back Contact Solar Cells with Carrier-selective Polysilicon on Oxide Junctions for Both Polarities.pdf

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Recombination Behavior of Photolithography-free Back Junction Back Contact Solar Cells with Carrier-selective Polysilicon on Oxide Junctions for Both Polarities.pdf

Available online at ScienceDirect Energy Procedia 92 (2016) 412 – 418 6th International Conference on Silicon Photovoltaics, SiliconPV 2016 Recombination behavior of photolithography-free back junction back contact solar cells with carrier-selective polysilicon on oxide junctions for both polarities Michael Rien?ckera,b,*, Agnes Merklea, Udo R?mera, Heike Kohlenberga,b, Jan Krügenerb,c, Rolf Brendela,d, Robby Peibsta,c aInstitute for Solar Energy Research Hamelin (ISFH), Am Ohrberg 1, D-31860 Emmerthal, Germany bLaboratory of Nano and Quantum Engineering (LNQE), Leibniz Universit?t Hannover, Schneiderberg 39, D-30167 Hannover, Germany cInstitute of Electronic Materials and Devices, Leibniz Universit?t Hannover, Schneiderberg 32, D-30167 Hannover, Germany dInstitute of Solid State Physics, Leibniz Universit?t Hannover, Appelstr. 2, D-30167 Hannover, Germany Abstract We report on ion-implanted, inkjet patterned back junction back contact silicon solar cells with POLysilicon on Oxide (POLO) junctions for both polarities – n+ doped BSF and p+ doped emitter. The recombination behavior is investigated at two different processing stages: before and after trench separation of p+ and n+ regions within polysilicon (poly-Si). Before trench separation, we find a systematic dependence of the recombination behavior on the BSF index, i.e. the p+n+-junction meander length in the poly-Si. Obviously, recombination at the p+n+-junction in the poly-Si limits the implied open circuit voltage Voc,impl. at one sun illumination and the implied pseudo fill factor pFFimpl. to 695 mV and 80 %, respectively. After trench isolation, however, Voc,impl (pFFimpl.) values increase up to 730 mV (85.5 %), corresponding to a pseudo-efficiency of 26.2 % for an assumed short circuit current density Jsc of 42 mA/cm2. We demonstrate a photolithography-free back junction back contacted solar cell with p-type and n-type POLO junctions with an in-house measured champion efficiency of 23.9 % on a designated