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Sputter deposition of Sn-doped ZnOAgSn-doped ZnO transparent contact layer for GaN LED applications.pdf

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Sputter deposition of Sn-doped ZnOAgSn-doped ZnO transparent contact layer for GaN LED applications.pdf

Materials Letters 180 (2016) 72–76 Contents lists available at ScienceDirect Materials Letters journal homepage: /locate/matlet Sputter deposition of Sn-doped ZnO/Ag/Sn-doped ZnO transparent contact layer for GaN LED applications Nae-Man Park a,b,n, Munsik Oh c, Yun-Been Na a,b, Woo-Seok Cheong a,b, Hyunsoo Kim c,nn a Materials and Components Laboratory, Electronics and Telecommunications Research Institute, Daejeon 34129, South Korea b Department of Advanced Device Technology, University of Science and Technology, Daejeon 34113, South Korea c School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju, Chonbuk 54896, South Korea article info Article history: Received 29 February 2016 Received in revised form 13 May 2016 Accepted 24 May 2016 Available online 24 May 2016 Keywords: GaN Transparent contact layer LED abstract Sn-doped ZnO/Ag/Sn-doped ZnO (ZAZ) multilayers prepared using sputtering process was employed in GaN-based blue light-emitting diodes(LEDs) as transparent contact layers (TCLs). The ZAZ layer had better optical and electrical properties without any thermal annealing. The ZAZ TCLs improved the current spreading on p-GaN layer and increased the light output power in the large area devices. The ef?ciency droop was also quite small in the case of adopting a ZAZ TCL in GaN-based LEDs. These results are promising for the development of a ZAZ TCL using sputtering process for GaN LED applications. 2016 Elsevier B.V. All rights reserved. 1. Introduction Although there are new applications using GaN [1,2], GaNbased light-emitting diodes (LEDs) are still important because they save energy and offer high ef?ciency and a reliable lifetime [3,4]. Nowadays, the applications of GaN LEDs has widened to traf?c signals, automotive lighting, communications, and illumination. However, further improvements in their light extraction ef?ciency and brightness are necessary for large-area devices. The light e