1-234-风电电力电子器件IGBT答辩.pptVIP

开关损耗的简易计算 原理：在硬开关状态下，开关管的开通与关断均需要一定的时间，在开关过程中，功率开关上流过的电流与承受的电压有一个交叠区，产生损耗，我们称为开关损耗。包括开通损耗与关断损耗。其中开关周期内的的开通损耗Won与关断损耗Woff分别等于开关过程中开关器件的端电压Uce与流过电流Ic的乘积在开关时间内的积分 一个载波周期T内功率开关器件的开通与关断的平均功率损耗为 IGBT的保护 作业 分析富士IGBT驱动芯片EXB841的工作原理(画出电路图）。 END * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * How: Clamping via the gate and the gate driver output stage The gate is charged partially via the gate driver output stage Efficient and precise clamping, Low risk of instability Collector Emitter Over-Voltage Protection Performance of the protection is not influenced by the gate resistor Design of the output stage is critical in terms of response time The driving transistor Q2 must be switched off and Q1 switched on within 100ns However, this is just in theory, the practice is very different!! * Collector Emitter Over-Voltage Protection Disconnection between the gate emitter voltage and the collector current is reality which makes protection very difficult Gate of the internal MOSFET is discharged below the Miller’s plateau before the BJT starts turning-off Thus, the gate emitter voltage is completely disconnected from the collector current No any control of the collector current from the gate emitter voltage!! * Collector Emitter Over-Voltage Protection The BJT is turning off and the collector emitter voltage is increasing, Once the voltage reaches the clamping diode threshold voltage, the diode starts conducting and charging the gate capacitance But, due to the gate impedance (inductance and resistance) and the capacitance, the gate voltage is delayed! Delay of only 50ns at dvCE/dt of 5kV/us generates an over-shoot of 250V ! As a consequence, the collector emitter voltage reaches the limit The system can start oscillating, IGBT over-voltage failure The delay depends on the gate current, and The gate current depends on the gate emitter voltage, which is limited by the gate supply voltage VCC. Not possible to reduce delay