affectionofdifferentdopingstructureonquantu.docVIP

Affection of different doping structure on quantum efficiency and spectrum response of reflection-mode GaN photocathode Jiangtao Fu, Guoqiang Zheng, Lipeng Zhou, Huahong Ma Institute of Electronic Information Engineering, Henan University of Science and Technology, Luoyang, 471003, People’s Republic of China Articleinf Article history:Received 19 July 2012Accepted 15 November 2012 Abstrct In order to analyze the effect of varied doping structure on the quantum efficiency and spectrum response of the photocathode, six kinds of reflective varied doping GaN photocathode samples are designed and grown. The quantum efficiency curves and the spectrum response curves are obtained after these samples are activated. Through the analysis of experiment result, the factors and the reasons that can affect the quantum efficiency and spectrum response are concluded. The experiment result shows that the photocathode with exponential-doping structure has the best spectrum response and the highest quantum efficiency. The experiment result provides suggestions for the study on optimizing design of photocathode doping structure. Keywords:GaN,Photocathodes,quantum efficiency,spectrum response Built-in electronic field has important impact on the quantum efficiency improvement, different photocathode doping method leads to different built-in electronic field, and naturally the quantum efficiency and the spectrum response are different [1–4]. In order to express the different doping methods’ affection on the quantum efficiency and the spectrum response, six GaN photocathode samples with different doping method are produced in experiment. The corresponding doping structure are shown as Fig. 1. Among them, uniform-doping method is applied in sample 1, gradient-doping method is applied in sample 2–5, and exponentialdoping method is applied in sample 6. The electron emiss