auirgps4067d1_IR.pdf

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE AUIRGPS4067D1 1 09/27/2012 VCES = 600V IC = 160A, TC = 100°C tSC ??6μs, TJ(max) = 175°C VCE(on) typ. = 1.70V Features ? Low VCE (on) Trench IGBT Technology ? Low Switching Losses ? 6μs SCSOA ? Square RBSOA ? 100% of the parts tested for ILM  ? Positive VCE (on) Temperature Coefficient ? Soft Recovery Co-pak Diode ? Lead-Free, RoHS Compliant ? Automotive Qualified * Benefits ? High Efficiency in a Wide Range of Applications ? Suitable for Applications in the Low to Mid-Rrange Frequencies ? Rugged Transient Performance for Increased Reliability ? Excellent Current Sharing in Parallel Operation ? Low EMI *Qualification standards can be found at /   G C E Gate Collector Emitter Super-247 AUIRGPS4067D1 G C E C E G n-channel C Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 240 IC @ TC = 100°C Continuous Collector Current 160 INOMINAL Nominal Current 120 ICM Pulse Collector Current, VGE = 15V 360 ILM Clamped Inductive Load Current, VGE = 20V  480 A IF NOMINAL Diode Nominal Current  120 IFM Diode Maximum Forward Current  480 VGE Continuous Gate-to-Emitter Voltage ±20 V Transient Gate-to-Emitter Voltage ±30 PD @ TC = 25°C Maximum Power Dissipation 750 W PD @ TC = 100°C Maximum Power Dissipation 375 TJ Operating Junction and -55 to +175 TSTG Storage Temperature Range °C