一个适用于极低温的宽温度范围子电路MOSFET模型.pdfVIP

Vol. 32, No. 6 Journal of Semiconductors June 2011 A sub-circuit MOSFET model with a wide temperature range including cryogenic temperature Jia Kan(贾侃)?, Sun Weifeng(孙伟锋), and Shi Longxing(时龙兴) National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China Abstract: A sub-circuit SPICE model of a MOSFET for low temperature operation is presented. Two resistors are introduced for the freeze-out effect, and the explicit behavioral models are developed for them. The model can be used in a wide temperature range covering both cryogenic temperature and regular temperatures. Key words: SPICE model; low temperature; sub-circuit; freeze-out effect; voltage control resistor DOI: 10.1088/1674-4926/32/6/064002 EEACC: 2570 1. Introduction The operation of a MOSFET at cryogenic temperatures has considerable improved performance: larger carrier mobil- ity and saturation velocity, smaller sub-threshold slope, bet- ter reliability, etc. Consequently, the application of a MOS- FET at cryogenic temperature has become very popular, such as infrared focal plane arrays, and detectors in the national de- fense and outer space areas?14?. As CAD engineering has be- comemore and more important, it is necessary to have an exact MOSFET SPICE model under a cryogenic temperature envi- ronment. Although the requirements of a low temperature MOSFET SPICE model are clear, regular MOSFET models cannot re- produce the low temperature character of a MOSFET prop- erly. Actually, although there has been much research on the character and operation of MOSFETs at low temperature?57?, and many analytical and numerical models that emphasize this academic study have been developed?811?, there is no stan- dard SPICE model for cryogenic temperature operation of a MOSFET yet. A convenient solution of this problem is a sub- circuit model, which is available to achieve good accuracy and compatibility with various SPICE simulators. In Refs. [12, 13], sub-circuit models for liqui