AO4468替代型号DMN3018SSS.docx

30V N-CHANNEL ENHANCEMENT MODE MOSFET AO4468替代型号DMN3018SSS  Features and Benefits ? Low On-Resistance ? Low Input Capacitance ? Fast Switching Speed ? ESD Protected Gate ? “Green” component and RoHS compliant (Notes 1 2) ? Qualified to AEC-Q101 standards for High Reliability  Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. ? Backlighting ? Power Management Functions ? DC-DC Converters  ? Case: SO-8 ? Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 ? Moisture Sensitivity: Level 1 per J-STD-020 ? Terminal Connections Indicator: See diagram ? Terminals: Finish ? Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 ? Weight: 0.008 grams (approximate)  Drain SO-8 S D S D  Body Diode  S G Top View D D Top View Pin Configuration  Equivalent Circuit Per Element  Ordering Information (Note 3) Part Number Case Packaging DMN3018SSS-13 SO-8 2500/Tape Reel Notes: 1. EU Directive 2002/95/EC (RoHS) 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free. 2. Diodes Inc.’s “Green” policy can be found on our website at . 3. For packaging details, go to our website at . Marking Information Top View Logo Part no. Xth week: 01 ~ 53 Year: “11” = 2011  Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±25 V Continuous Drain Current (Note 5) VGS = 10V Steady State TA = 25?C TA = 70?C ID 7.3 5.7 A t10s TA = 25?C TA = 70?C ID 9.7 7.8 A Continuous Drain Current (Note 5) VGS = 4.5V Steady State TA = 25?C TA = 70?C ID 5.5 4.3 A t10s TA = 25?C TA = 70?C ID 7.6 5.8 A Pulsed Drain Current (10?s pulse, duty cycle = 1%) IDM 60 A Maximum Body Diode continuous Current IS 2.5 A Thermal Chara