AOD9N40规格书.pdf

AOT9N40 400V,8A N-Channel MOSFET General Description Product Summary VDS ID (at VGS=10V) 8A RDS(ON) (at VGS=10V) 0.8? 100% UIS Tested 100% Rg Tested For Halogen Free add L suffix to part number: AOT9N40L Symbol VDS VGS IDM IAR EAR EAS Peak diode recovery dv/dt dv/dt TJ, TSTG TL Symbol RθJA RθCS RθJC °C/W0.5 °C Maximum Junction-to-Ambient A,D °C/W65 300 Thermal Characteristics mJRepetitive avalanche energy C 5 Power Dissipation B V/ns PD 5 Junction and Storage Temperature Range Derate above 25oC TC=25°C 3.2 TC=100°C V Parameter Absolute Maximum Ratings TA=25°C unless otherwise noted 500V@150℃ Drain-Source Voltage AOT9N40 400 The AOT9N40 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply designs.These parts are ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Units V±30Gate-Source Voltage 8Continuous Drain Current TC=25°C ID A 22Pulsed Drain Current C Maximum Junction-to-Case 132 1 Avalanche Current C 150 Single pulsed avalanche energy G 300 Parameter Maximum Case-to-sink A Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds °C/W AOT9N40 Units A °C mJ W W/ oC -55 to 150 0.95 G D SG D S Top View TO-220 AOT9N40 Symbol Min Typ Max Units 400 500 BVDSS /?TJ 0.4 V/ oC 1 10 IGSS Gate-Body leakage current ±100 nΑ VGS(th) Gate Threshold Voltage 3.4 4 4.5 V RDS(ON) 0.64 0.8 ? gFS 8 S VSD 0.75 1 V IS Maximum Body-Diode Continuous Current 8 A ISM 22 A Ciss 500 630 760 pF Coss 45 73 100 pF Crss 2 5.7 9 pF Rg 1.2 2.6 4.0 ? Qg 10 13.1 16 nC Qgs 3.9 nC Qgd 4.8 nC tD(on) 17 ns tr 52 ns tD(off) 25 ns tf 30 ns trr 150 195 240 ns Qrr 1.5 1.9 2.3 μC THIS PRODUCT HAS BEEN