AON5802A替代型号DMG5802LFX.docx

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET AON5802A替代型号DMG5802LFX  Features ? Low On-Resistance ? Low Input Capacitance ? Fast Switching Speed ? Low Input/Output Leakage ? ESD Protected up to 3kV  ? Totally Lead-Free Fully RoHS Compliant (Notes 1 2) Description This new generation MOSFET has been designed to minimize the on- state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications ? DC-DC Converters ? Power management functions ? Halogen and Antimony Free. “Green” Device (Note 3) ? Qualified to AEC-Q101 Standards for High Reliability Mechanical Data ? Case: W-DFN5020-6 ? Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 ? Moisture Sensitivity: Level 1 per J-STD-020 ? Terminal Connections: See Diagram Below ? Weight: 0.03 grams (approximate)  G1 S1 S1 W-DFN5020-6 D1 D2 G1  ESD PROTECTED TO 3kV  Top View  Bottom View  G2 S2 S2 Top View Pin-Out S1 S2 Equivalent Circuit  Ordering Information (Note 4) Part Number Case Packaging DMG5802LFX-7 W-DFN5020-6 3000 / Tape Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) 2011/65/EU (RoHS 2) compliant. 2. See /quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, Green and Lead-free. 3. Halogen- and Antimony-free Green” products are defined as those which contain 900ppm bromine, 900ppm chlorine (1500ppm total Br + Cl) and 1000ppm antimony compounds. 4. For packaging details, go to our website at /products/packages.html. Marking Information ME = Product Type Marking Code YM = Date Code Marking Y = Year (ex: X = 2010) M = Month (ex: 9 = September) Date Code Key Year 2010 2011 2012 2013 2014 2015 2016 2017 2018 Code X Y Z A B C D E F Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D  Maximum Ratings (@TA = +25°C, unless otherwise specified.) Chara