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AON5820替代型号DMN2011UFX
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
? Low On-Resistance
? Low Input Capacitance
? Fast Switching Speed
? Low Input/Output Leakage
? ESD Protected
? Totally Lead-Free Fully RoHS Compliant (Notes 1 2)
? Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
? General Purpose Interfacing Switch
? Power Management Functions
Mechanical Data
? Case: V-DFN2050-4
? Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
? Moisture Sensitivity: Level 1 per J-STD-020
? Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4
? Weight: 0.01 grams (Approximate)
G1 S1
V-DFN2050-4
D D
G1 G2
Gate Protection Diode
Gate Protection Diode
G2 S2
Top View
Bottom View Top View Pin-Out
Equivalent Circuit
Ordering Information (Note 4)
Part Number
Case
Packaging
DMN2011UFX-7
V-DFN2050-4
3,000 / Tape Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) 2011/65/EU (RoHS 2) compliant.
2. See /quality/lead_free.htmlfor more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, Green and Lead-free.
3. Halogen- and Antimony-free Green” products are defined as those which contain 900ppm bromine, 900ppm chlorine (1500ppm total Br + Cl) and
1000ppm antimony compounds.
4. For packaging details, go to our website at /products/packages.html.
Marking Information
Date Code Key
1X = Product Type Marking Code YM = Date Code Marking
Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
Year
2014
2015
2016
2017
2018
2019
2020
Code
B
C
D
E
F
G
H
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Maximum Ratings (@TA = +25°C, unles
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