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AON5820替代型号DMN2011UFX.docx

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AON5820替代型号DMN2011UFX

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits ? Low On-Resistance ? Low Input Capacitance ? Fast Switching Speed ? Low Input/Output Leakage ? ESD Protected ? Totally Lead-Free Fully RoHS Compliant (Notes 1 2) ? Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. ? General Purpose Interfacing Switch ? Power Management Functions Mechanical Data ? Case: V-DFN2050-4 ? Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 ? Moisture Sensitivity: Level 1 per J-STD-020 ? Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 ? Weight: 0.01 grams (Approximate) G1 S1 V-DFN2050-4 D D G1 G2 Gate Protection Diode  Gate Protection Diode G2 S2 Top View Bottom View Top View Pin-Out Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMN2011UFX-7 V-DFN2050-4 3,000 / Tape Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) 2011/65/EU (RoHS 2) compliant. 2. See /quality/lead_free.htmlfor more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, Green and Lead-free. 3. Halogen- and Antimony-free Green” products are defined as those which contain 900ppm bromine, 900ppm chlorine (1500ppm total Br + Cl) and 1000ppm antimony compounds. 4. For packaging details, go to our website at /products/packages.html. Marking Information Date Code Key 1X = Product Type Marking Code YM = Date Code Marking Y = Year (ex: B = 2014) M = Month (ex: 9 = September) Year 2014 2015 2016 2017 2018 2019 2020 Code B C D E F G H Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Maximum Ratings (@TA = +25°C, unles

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