DTL50P03规格书(最新版).pdfVIP

1P-Channel 30 V (D-S) MOSFET FEATURES ? TrenchFET? Power MOSFET ? Low On-Resistance for Low Voltage Drop ? Extended VGS max. Rating: 25 V ? 100 % Rg and UIS Tested APPLICATIONS ? Battery, Load and Adaptor Switches - Notebook Computers - Notebook Battery Packs Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. Maximum under steady state conditions is 70 °C/W. d. Package limited. PRODUCT SUMMARY VDS (V) RDS(on) (?) Max. ID (A) Qg (Typ.) - 30 0.010 at VGS = - 10 V - 50d 43.1 nC 0.015 at VGS = - 4.5 V - 50d ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS - 30 V Gate-Source Voltage VGS ± 25 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 50d A TC = 70 °C - 50d TA = 25 °C - 23.1a, b TA = 70 °C - 18.4a, b Pulsed Drain Current (t = 100 μs) IDM - 300 Continuous Source-Drain Diode Current TC = 25 °C IS - 50d TA = 25 °C - 4.1a, b Avalanche Current L = 0.1 mH IAS - 25 Single-Pulse Avalanche Energy EAS 31.2 mJ Maximum Power Dissipation TC = 25 °C PD 48 W TC = 70 °C 31 TA = 25 °C 5a, b TA = 70 °C 3.2a, b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, c t ??10 s RthJA 21 25 °C/W Maximum Junction-to-Case Steady State RthJC 2.1 2.6 DTL50P03 S G D P-Channel MOSFET TO-251 G D S Top View 2Notes: a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unle