DTM4425规格书(最新版).pdfVIP

1P-Channel 30-V (D-S) MOSFET FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET ? Power MOSFET ? 100 % R g Tested APPLICATIONS ? Load Switches - Notebook PCs - Desktop PCs PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.) - 30 0.0088 at V GS = 10 V - 15 27 nC 0.0105 at V GS = 4.5 V - 13.7 SO-8 S D S D S D G D5 6 7 8 Top View 2 3 4 1 S G D P-Channel MOSFET Notes: a. Based on T C = 25 °C. b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage V DS - 30 V Gate-Source Voltage V GS ± 20 Continuous Drain Current (T J = 150 °C) T C = 25 °C I D - 15 A T C = 70 °C - 12.7 T A = 25 °C - 13 b, c T A = 70 °C - 10.4 b, c Pulsed Drain Current I DM - 50 Continous Source-Drain Diode Current T C = 25 °C I S - 4.7 T A = 25 °C - 2.1 b, c Maximum Power Dissipation T C = 25 °C P D 5.7 W T C = 70 °C 3.6 T A = 25 °C 2.5 b, c T A = 70 °C 1.6 b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient b, d t ≤ 10 s RthJA 35 50 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 18 22 DTM4425 2Notes: a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS T J = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V,