RZR025P01TL;中文规格书,Datasheet资料.pdfVIP

RZR025P01 Transistors 1/5 1.5V Drive Pch MOSFET RZR025P01 Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT3). 4) Low voltage drive (1.5V). Application Switching Structure Silicon P-channel MOSFET Dimensions (Unit : mm) Each lead has same dimensions(1) Gate (2) Source (3) Drain TSMT3 0~0.1 0.16 0.85 1.0MAX 0.7 0 .3 ~ 0 .6 (2)(1) (3) 2.9 2 .8 1.9 1 .6 0.950.95 0.4 Abbreviated symbol : YC Packaging specifications Equivalent circuit Package Code Taping Basic ordering unit (pieces) RZR025P01 TL 3000 Type Absolute maximum ratings (Ta=25°C) ?1 ?1 ?2 Parameter VVDSS Symbol ?12 VVGSS ±10 AID ±2.5 AIDP ±10 AIS ?0.8 AISP ?10 WPD 1.0 °CTch 150 °CTstg ?55 to +150 Limits Unit Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Range of Storage temperature Continuous Pulsed Continuous Pulsed ?1 Pw≤10μs, Duty cycle≤1% ?2 Mounted on a ceramic board Source current (Body diode) Thermal resistance °C / WRth (ch-a) 125 Parameter Symbol Limits Unit Channel to ambient ? When mounted on a ceramic board. ? (1) Gate (2) Source (3) Drain ?1 ESD PROTECTION DIODE ?2 BODY DIODE ?2 ?1 (3) (1) (2) / RZR025P01 Transistors 2/5 Electrical characteristics (Ta=25°C) Parameter Symbol IGSS Yfs Min. Typ. Max. Unit Conditions V(BR) DSS IDSS VGS (th) RDS (on) Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ? ? ±10 μA VGS=±10V, VDS=0V VDD ?6V, ID= ?2.5A ?12 ? ? V ID= ?1mA, VGS=0V ? ? ?1 μA VDS= ?12V, VGS=0V ?0.3 ? ?1.0 V VDS= ?6V, ID= ?1mA ? 44 61 ID= ?2.5