cdznte薄膜制备与性能表征本科毕业设计.docVIP

国内图书分类号：TN304 西北工业大学 工学硕士学位论文 CdZnTe薄膜制备与性能表征 硕士研 究 生：周 昊 导 师：介 万 奇 教授 申请学位级别：硕 士 学 科、专 业：材 料 学 所 在 单 位：材 料 学 院 答 辩 日 期：2010年03月 授予学位单位：西北工业大学 Classified index：TN304 Thesis submitted in partial fulfillment of the requirements for the degree of Master of Engineering Growth and Characterization Of CdZnTe Film MS Candidate： ZHOU Hao Advisor： Professor JIE Wanqi Degree Applied for： Master of Engineering Specialty： Materials Engineering School： School of Materials Science and Engineering Date of Oral Defence： March 2010 University Conferring Degree： Northwestern Polytechnical University 摘 要 CdZnTe是种性能优异的II-VI族化合物半导体。改变沉积时间得到了三组不同厚度的CdZnTe薄膜依次分别命名为CZT-1CZT-2和CZT-3。不同沉积下制备得到的薄膜的结晶质量表面形貌禁带宽度和电学性能；观察CdZnTe薄膜界面处的，分析CdZnTe薄膜沉积模型在N2气氛下，研究了退火对薄膜形貌、光学带隙宽度和电学性能的影响。薄膜中的成分配比偏离原料中的配比，呈现不同程度的富Te倾向。随着沉积时间的延长，层岛复合模式的生长机制。CZT-1、CZT-2和CZT-3cm、3.1E11cm和7.4E11cm。在 300℃和400℃氮气气氛退火后，薄膜择优取向得到加强，薄膜颗粒长大，光学吸收边变得陡峭，电阻率提高，平衡载流子增加。 关键词 CdZnTe薄膜, 太阳能电池, 性能表征, 退火 ABSTRACT CdZnTe (CZT) is a kind of II-VI semiconductors with excellent photoelectric properties. Although the study on CdZnTe crystal has lasted for a long period, there still exist some problems in the preparation, characterization and upgradation of CdZnTe films. In this thesis, the CdZnTe thin films were prepared by vacuum deposition method, which is proved to be the best method among different technologies for the large area prepration of CdZnTe thin films due to its simplicity and low cost. Nano-crystalline CdZnTe films were grown on silicon wafer and glass substrate by vacuum deposition method. CdZnTe film samples grown under the same conditions with different deposition time, are named CZT1, CZT2 and CZT-3 respectively. The composition, structure, surface morphology and the photoelectric properties of the three samples were analyzed. The effects of the annealing in N2 on the properties were studied. The interface between the CdZnTe films and Si substra