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spicemodel-SPICEDiodeandBJTmodels

Department of Electrical and Electronic Engineering Imperial College London EE 2.3: Semiconductor Modelling in SPICE Course homepage: http://www.imperial.ac.uk/people/paul.mitcheson/teaching SPICE Diode and BJT models Paul D. Mitcheson paul.mitcheson@imperial.ac.uk Room 1111, EEE EE2.3 Semiconductor Modelling in SPICE / PDM – v1.0 1 1. Summary of last lecture We saw that: • SPICE deals with current sources not voltage sources • Gaussian elimination is used to solve the equations • Newton-Raphson is used to solve circuits with non-linear elements • There is a convergence aid, called GMIN, which aids convergence of the Newton- Raphson algorithm by eliminating divide by zero errors EE2.3 Semiconductor Modelling in SPICE / PDM – v1.0 2 2. Today’s lecture We will look at: • SPICE large signal diode model • DC and large signal transient models • SPICE large signal BJT model • DC and large signal transient models • The parameters of these models and how they relate to the device physics you know EE2.3 Semiconductor Modelling in SPICE / PDM – v1.0 3 3. 3.1. The SPICE Diode Model DC Model The simple DC equation you know is the well known Shockley equation, that is: ⎥ ⎦ ⎤ ⎢ ⎣ ⎡ −⎟⎟ ⎠ ⎞ ⎜⎜ ⎝ ⎛ = 1exp t sD V VII Where IS is the diode’s reverse saturation current, V is the applied voltage bias, Vt is the thermal voltage (equal to kT/q which is about 25mV at room temperature) and ID is the current through the device. EE2.3 Semiconductor Modelling in SPICE / PDM – v1.0 4 The simple DC model used in SPICE is very similar to the Shockley equation, with the addition of a parameter n, and a convergence aid of a the GMIN parallel conductance (see Error! Reference source not found.). The basic static diode model equation is thus: GMINV nV VII D t sD +⎥ ⎦ ⎤ ⎢ ⎣ ⎡ −⎟⎟ ⎠ ⎞ ⎜⎜ ⎝ ⎛ = 1exp ⎥ ⎦ ⎤ ⎢ ⎣ ⎡ −⎟⎟ ⎠ ⎞ ⎜⎜ ⎝ ⎛ = 1exp t sD nV VII EE2.3 Semiconductor Modelling in SPICE

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