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spicemodel-SPICEDiodeandBJTmodels
Department of Electrical and Electronic Engineering
Imperial College London
EE 2.3: Semiconductor Modelling in SPICE
Course homepage:
http://www.imperial.ac.uk/people/paul.mitcheson/teaching
SPICE Diode and BJT models
Paul D. Mitcheson
paul.mitcheson@imperial.ac.uk
Room 1111, EEE
EE2.3 Semiconductor Modelling in SPICE / PDM – v1.0 1
1. Summary of last lecture
We saw that:
• SPICE deals with current sources not voltage sources
• Gaussian elimination is used to solve the equations
• Newton-Raphson is used to solve circuits with non-linear elements
• There is a convergence aid, called GMIN, which aids convergence of the Newton-
Raphson algorithm by eliminating divide by zero errors
EE2.3 Semiconductor Modelling in SPICE / PDM – v1.0 2
2. Today’s lecture
We will look at:
• SPICE large signal diode model
• DC and large signal transient models
• SPICE large signal BJT model
• DC and large signal transient models
• The parameters of these models and how they relate to the device physics you know
EE2.3 Semiconductor Modelling in SPICE / PDM – v1.0 3
3.
3.1.
The SPICE Diode Model
DC Model
The simple DC equation you know is the well known Shockley equation, that is:
⎥
⎦
⎤
⎢
⎣
⎡
−⎟⎟
⎠
⎞
⎜⎜
⎝
⎛
= 1exp
t
sD V
VII
Where IS is the diode’s reverse saturation current, V is the applied voltage bias, Vt is the
thermal voltage (equal to kT/q which is about 25mV at room temperature) and ID is the
current through the device.
EE2.3 Semiconductor Modelling in SPICE / PDM – v1.0 4
The simple DC model used in SPICE is very similar to the Shockley equation, with the
addition of a parameter n, and a convergence aid of a the GMIN parallel conductance (see
Error! Reference source not found.). The basic static diode model equation is thus:
GMINV
nV
VII D
t
sD +⎥
⎦
⎤
⎢
⎣
⎡
−⎟⎟
⎠
⎞
⎜⎜
⎝
⎛
= 1exp
⎥
⎦
⎤
⎢
⎣
⎡
−⎟⎟
⎠
⎞
⎜⎜
⎝
⎛
= 1exp
t
sD nV
VII
EE2.3 Semiconductor Modelling in SPICE
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