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12A02CH-TL-E;中文规格书,Datasheet资料
12A02CH
No.7482-1/6
Applications
? Low-frequency Amplifi er, high-speed switching, small motor drive, muting circuit
Features
? Large current capacity
? Low collector-to-emitter saturation voltage (resistance) RCE (sat) typ.=285mΩ [IC=1A, IB=50mA]
? Small ON-resistance (Ron)
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO --15 V
Collector-to-Emitter Voltage VCEO --12 V
Emitter-to-Base Voltage VEBO --5 V
Collector Current IC --1 A
Collector Current (Pulse) ICP --2 A
Collector Dissipation PC Mounted on a ceramic board (600mm
2×0.8mm) 700 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Package Dimensions
unit : mm (typ)
7015A-003
Ordering number : EN7482A
82212 TKIM/O2203 TSIM TA-100610
SANYO Semiconductors
DATA SHEET
12A02CH
PNP Epitaxial Planar Silicon Transistor
Low-Frequency General-Purpose
Amplifi er Applications
/en/network/
Product Package Information
? Package : CPH3
? JEITA, JEDEC : SC-59, TO-236, SOT-23
? Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL Marking
Electrical Connection
3
2
1
A
D
LO
T
N
o.
TL
12A02CH-TL-E
1 : Base
2 : Emitter
3 : Collector
SANYO : CPH3
2.9
0.05
0.4
2.
8
1.
6
0.
2
0.
6
0.
6
0.
9
0.
2
0.15
21
3
0.95
/
12A02CH
No.7482-2/6
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Ratings
Unit
min typ max
Collector Cutoff Current ICBO VCB= --12V, IE=0A --100 nA
Emitter Cutoff Current IEBO VEB= --4V, IC=0A --100 nA
DC Current Gain hFE VCE= --2V, IC= --10mA 300 700
Gain-Bandwidth Product fT VCE= --2V, IC= --50mA 450 MHz
Output Capacitance Cob VCB= --10V, f=1MHz 6 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC= --400mA, IB= --20mA --120 --240 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC= --400mA, IB= --20mA --0.9 --1.2 mV
Collector-to-Base Breakdown Voltage V(BR)CBO IC= --10μA, IE=0A --15 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC= --1mA, RBE=∞ --12 V
Emitter-to-Base Breakdown Vo
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