aln_artikel_bull.pdf

Anceram - Publications Aluminium Nitride (AlN) ANCeram GmbH Co.KG ? Esbachgraben 21 ? D-95463 Bindlach English http:// www.anceram.de page 1 of 5 Advanced Materials Powders Handbook Aluminium Nitride (AlN) The existence of AlN was discovered in 1862 by F. Briegler and A. Geuther and the first synthesis was realized by J.W. Mallets in 1877. For more than a hundred years AlN was merely of academic interest for its chemistry. AlN ceramic technology evolved quickly since 1984 but the products in the beginning are best described as inconsistent. This was due to poor-quality powders and inexperience with commercial-scale fabrication technologies. Materials, both powders and parts, were poorly characterized. Thus, results were often not reproducible, particularly in the metallization of substrates. During the period 1985-88, the following concerns arose about the use of AlN in microelectronic packaging: oxidative stability, hydrolytic stability, surface finish/chemistry, metallization paste systems, cofiring and brazing, thermal conductivity, cost. High-Quality AlN substrates and packaging emerged in the early 1990s. The consistency of AlN products has increased dramatically and processing technologies have been developed to the point that AlN ceramics are now in use worldwide in commercial packages. Metallization systems as consistent and strong as the oxide metallization systems have been developed for nitrides. In addition, co-fired, multilayer AlN packaging has been developed and offers an alternative for power applications. More than 20 companies worldwide are developing AlN technology. In comparison to other electrically insulating ceramic materials only AlN and beryllium oxide (BeO) offer high thermal conductivities. BeO shows higher values than AlN but has been banned by numerous manufacturers because of its toxicity. Thus, the nontoxic AlN continues to replace BeO for most applications. Fig. 1: Thermal conductivity of different