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- 2017-04-13 发布于江苏
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Ashing - hardware and process
Cameo?Consulting
Stripping and Cleaning:
The Tenacity of Plasma Processing
Prepared for xxx
Karen Reinhardt
PESM
September 2007
Cameo?Consulting
Presentation Contents
A little history… (OK a lot of history)
What are the current stripping challenges?
How are these challenges addressed?
What is the future for plasma stripping?
Conclusion… Why plasma is here to stay
At least for a while…
Cameo?Consulting
Caveman Plasma
1 μm geometries
Batch barrel reactor
Simple reactor design
Basic O2 plasma
N2 and CF4 addition
Uniformity
But who cares, just over-ash
Charging!!!
But who cared, just wet etch the
damaged oxide away
Residue!!!
But who cared, just remove it in
NMP
Particle!!!
But who cared, other systems
were a lot worse
“That new microwave tuning
technique really works”
Branson
Pre-1985
Cameo?Consulting
Simple Resist Ashing
Bulk
resist In the good ole days…
first ashing and then cleaning
Not much
polymer
Little
residue
Send it to the next step…
Some
particles
Cameo?Consulting
Simple Plasma Reactors
Branson/IPC
LFE
Tegal
In the good ole days…
batch processors and no automation
Cameo?Consulting
SPM or solvent clean step
And Simple Recipes
Followed by
Plasma chemistry
Additives
RF 13.56 MHz power
Pressure
Temperature
Process time
2000-10000 sccm O2
0-20 vol% N2
0-25 vol% CF4
500-2000 Watts
0.5-5.0 Torr
150-325°C
30-90 min
Batch downstream RF barrel reactor recipe
Bulk photoresist stripping process
Cameo?Consulting
Renaissance Plasma
0.25 to ~1.0 μm geometries
Single wafer
Simple platform
Downstream stripping
technology
Still basic O2 plasma
CF4 addition
Uniformity is a lot better
Charging is addressed
Baffles
Residue is addressed
Just etch it away!
Still a lot of particles
And still, who cared, other
systems were a lot worse
The morning production meeting
1985-1998
Cameo?Consulting
Importance of Residues Removal Realized
The realization that residue,
metallic contamination, and
particles effected yield
drove the need for cleaning
Reference: Via: S. Lutter
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