CNY172SR2M,CNY173SR2M,CNY173SR2M,CNY173SR2M,CNY174SR2VM,CNY174SR2VM, 规格书,Datasheet 资料.pdf

C N Y 17X M , C N Y 17F X M , M O C 810X M — P h o to tran sisto r O p to co u p lers ?2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 November 2009 CNY171M, CNY172M, CNY173M, CNY174M, CNY17F1M, CNY17F2M, CNY17F3M, CNY17F4M, MOC8106M, MOC8107M Phototransistor Optocouplers Features ■ UL recognized (File # E90700, Vol. 2) ■ VDE recognized – Add option V (e.g., CNY17F2VM) – File #102497 ■ Current transfer ratio in select groups ■ High BV CEO : 70V minimum (CNY17XM, CNY17FXM, MOC810XM) ■ Closely matched current transfer ratio (CTR) minimizes unit-to-unit variation. ■ Very low coupled capacitance along with no chip to pin 6 base connection for minimum noise susceptability (CNY17FXM, MOC810XM) Applications ■ Power supply regulators ■ Digital logic inputs ■ Microprocessor inputs ■ Appliance sensor systems ■ Industrial controls Description The CNY17XM, CNY17FXM and MOC810XM devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package. Schematics CNY17F1M/2M/3M/4M MOC8106M/7M CNY171M/2M/3M/4M 1 2 6 5 COLLECTOR COLLECTOR 4 EMITTERNC NC NCANODE CATHODE 3 1 2 6 5 4 EMITTER BASEANODE CATHODE 3 Package Outlines 芯天下--/ ?2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 2 C N Y 17X M , C N Y 17F X M , M O C 810X M — P h o to tran sisto r O p to co u p lers Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameters Value Units TOTAL DEVICE T STG Storage Temperature -40 to +150 °C T OPR Operating Temperature -4