Interfacial stability and contact damage resistance by incorporating buffer layer in thermal barrier.pdfVIP
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Interfacial stability and contact damage resistance by incorporating buffer layer in thermal barrier
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dProgress in Organic Coatings 67 (2010) 95–101
Contents lists available at ScienceDirect
Progress in Organic Coatings
journa l homepage: www.e lsev ier .com/ locate /porgcoat
nterfacial stability and contact damage resistance by incorporating buffer layer
n thermal barrier coatings
ae-Young Kwona, Sung-Il Junga, Sang-Yeop Leea, Pyung-Ho Leea, Je-Hyun Leea, Yeon-Gil Junga,?,
ngyu Paikb,??, Hyun Choc, Jung-Chel Changd
School of Nano and Advanced Materials Engineering, Changwon National University, Sarim-dong, Changwon, Kyungnam 641-773, Republic of Korea
Department of Energy Engineering, Hanyang University, Haengdang-dong, Sungdon-gu, Seoul 133-791, Republic of Korea
Department of Nanosystem and Nanoprocess Engineering, Pusan National University, Miryang, Kyungnam 627-706, Republic of Korea
Power Generation Lab., Korea Electric Power Research Institute, Munji-Ro Yisung-Gu, Daejeon 350-380, Republic of Korea
r t i c l e i n f o
rticle history:
eceived 2 June 2009
eceived in revised form 12 August 2009
ccepted 20 August 2009
eywords:
hermal barrier coating
uffer layer
ndentation stress–strain
ontact damage
a b s t r a c t
A buffer layer was introduced between the bond and top coats in air-plasma sprayed (APS) zirconia
(ZrO2)-based thermal barrier coating (TBC) system, to improve contact damage and interfacial stability.
The microstructure is relatively continuous in the TBC system with the buffer layer, showing a step like
distribution of Zr element between the top and bond coats. The TBC system with the buffer layer shows
less strain than that without the buffer layer in the higher stress regions above about 1.3GPa, while
both TBC systems become soft by forming the top coat in the lower stress regions compared with the
substrate. The TBC system with the buffer layer shows the lower stress–strain curves than that without
the buffer layer in the thermal exposure with the relatively short dwell time of 1h,
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