IRFZ44NSTRLPBF;IRFZ44NLPBF;IRFZ44NSPBF;IRFZ44NSTRRPBF;中文规格书,Datasheet资料.pdf

 
  

  

  
 
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 Parameter Typ. Max. Units RθJC Junction-to-Case ??? 1.5 RθJA Junction-to-Ambient ??? 40 °C/W Thermal Resistance Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 49 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 35 A IDM Pulsed Drain Current
160 PD @TA = 25°C Power Dissipation 3.8 W PD @TC = 25°C Power Dissipation 94 W Linear Derating Factor 0.63 W/°C VGS Gate-to-Source Voltage ± 20 V IAR Avalanche Current
25 A EAR Repetitive Avalanche Energy
9.4 mJ dv/dt Peak Diode Recovery dv/dt  5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C 1 +!,$- /
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