张文俊,采用局部补偿的有理分式拟合建模方法,清.docVIP

叶佐昌，焦超，余志平，张文俊，“采用局部补偿的有理分式拟合建模方法”，清华学报（自然科学版），2005年，第45卷，第一期，126，2005年1月。 Dawei Zhang, Zhiping Yu, and Lilin Tian, “Compact Modeling of 3D FinFETs”, 2nd IWCM, ASP-DAC, Shanghai, China, Jan. 2005. Dawei Zhang, Hao Zhang, Guangping Zhu, Xuelian Zhang, Lilin Tian and Zhiping Yu, “Compact I-V Model for Sub-100nm Bulk Silicon MOSFETs”, Chinese Journal of Semiconductors, Vol. 26, No. 3, March 2005. Dawei Zhang, Lilin Tian and Zhiping Yu, “On Analytical Modeling of Threshold Voltage for Double-Gate MOSFET Fully Comprising Quantum Mechanical Effects”, Chinese Journal of Semiconductors, Vol. 26, No