LED用硅掺杂GaAs晶体的生长与表征.pdfVIP

Growth and CharacterizationGaAsSi-dopedof ApplicationforCrystalsLED JINMin XUJia-yue FANG Yong-zhengHE Qing-boZHOU Ding SHEN Hui Schoolof Materials Science andEngineering, Shanghai Institute ofTechnology, Shanghai China200235, Abstract:Si-doped cruciblemethod.bygrowncrystalPBNwithGaAswasBridgman511orientation a Asprocessevaporationwasampoulewelltoseedofinprotectquartz theusedandadopted growth. Thedoping defectssolid-liquidgrowthinterfaceinvestigated.weremorphologytechnology, and Thetwinning wasa crucial problemfor the pulling-down GaAs511crystal.of TheSi-dopedgrowth formationmechanism ofthe twins wassuggested andthe growth parameterswere optimized.Si2-inch doped GaAs crystal hasbeen grown successfully andX-ray rocking curve showed aboutFWHMthatwas GaAs; crystal growth; pulling-downmethod; Si-doped; twins O78;TW305.1 A 1000-985X(2012) 03-0594-05 LED用硅掺杂GaAs晶体的生长与表征 金 敏 徐家跃 房永征 何庆波 周 鼎 申 慧 上海 应用技术学 院材料科学与工程学院，上海200235 摘要：采用坩埚下降法生长了LED用硅掺杂511取向的GaAs晶体。选用带籽最槽的PBN坩埚作为生长容器， 密封在石英安瓶中以防止生长过程中As蒸汽挥发。研究了掺杂工艺、固液界面形貌和生长缺陷。结果表明：孪晶 化是硅掺杂GaAs晶体生长的主要问题。探讨了孪晶形成机理，优化了生长工艺，成功获得了直径2英寸高质量的 硅掺杂GaAs晶体，双摇摆曲线显示所得晶体的FWHM为40arcsec。 GaAs；晶体生长；坩埚下降法；硅掺杂；孪晶 2012-03-05 2012-03-29 National Natural Science Foundation ofChina ; ShanghaiTechnology Committeeand(09530500800,Science 10XD1403800,11JC1412400) Commission(11Education10XD1403800,11JC1412400);ShanghaiYZ222) :JIN Min(1982-), male, from E-mail:jmaish@yahoo.cn:JINmale,province,PhD.Hubei Min(1982-), crysml canbe Accent Optical). r theseed position @@ Overview[J].J.P,Growth[1]ofBulkCrystalanJurisch@@Growth,1999,198/199:325-335.GaAsRudolphM. @@ [2] Jurisch LEC-andVGF-growthGaAsCrystalM,ofF,Deve