AluminiumSingleCrystals.PDF

Anisotropy of Electrical Resistivity in High-Purity Aluminium Single Crystals Y. Ueda, E. Hashimoto, H. Tamura, T. Kino To cite this version: Y. Ueda, E. Hashimoto, H. Tamura, T. Kino. Anisotropy of Electrical Resistivity in High-Purity Aluminium Single Crystals. Journal de Physique IV Colloque, 1995, 05 (C7), pp.C7-287-C7- 292. 10.1051/jp4:1995734. jpa HAL Id: jpa https://hal.archives-ouvertes.fr/jpa Submitted on 1 Jan 1995 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destin′eeau d′ep?otet `ala di?usion de documents enti?c research documents, whether they are pub- scienti?ques de niveau recherche, publi′esou non, lished or not. The documents may come from ′emanant des ′etablissements d’enseignement et de teaching and research institutions in France or recherche fran?caisou ′etrangers,des laboratoires abroad, or from public or private research centers. publics ou priv′es. JOURNAL DE PHYSIQUE IV Colloque C7, supplkment au Journal de Physique III, Volume 5, novembre 1995 Anisotropy of Electrical Resistivity in High-Purity Aluminium Single Crystals Y. Ueda, E. Hashimoto, H. Tamura and T. Kino* Laboratory of Crystal Physics, Faculty of Science, Hiroshima University, Higashi-Hiroshima 739, Japan * Hiroshima-Denki Institute of Technology, Hiroshima 739-03, Japan Abstract. The current direction dependence of electrical resistivity was measured at temperatures between 4.2 and 80 K in single crystals of high-purity aluminium (RRR - 50 000) with a common (110) surface. The main results found in this experiment are as follows. (1) The residual resistivity in the bulk value, pb, shows high dependence on current direction, basically i