Base Width Variations and its Effects on Frequency Response of Double Hetero-structure Long Wavelength Transistor Laser.docVIP

Optics and Photonics Journal, 2013, 3, 248-251 doi:10.4236/opj.2013.32B058 Published Online June 2013 (/journal/opj) Base Width Variations and its Effects on Frequency Response of Double Hetero-structure Long Wavelength Transistor Laser Mohammad Reza Farjadian, Hassan Kaatuzian, Iman Taghavi Photonics Research Laboratory (PRL), Electrical Engineering Department, Amirkabir University of Technology, Tehran, Iran Email: rezafarjadian@aut.ac.ir, hsnkato@aut.ac.ir, eimantaghavi@aut.ac.ir Received 2013 ABSTRACT In this paper we investigate the effects of base width variation on performance of long wavelength transistor laser. In our structure with increasing the base width, the cut off frequency increases until 367 nm with 24.5 GHz and then abruptly fall. In 100 nm base width, we have 17.5 GHz cut off frequency, and overall ac performances become opti- mized, although, other parameters like optical losses and threshold current density are not optimized. Keywords: Transistor Laser; Quantum Well; Long Wavelength; Optical Confinement Factor 1. Introduction strained In0.58Ga0.42As QW of 8 nm is placed in the mid- dle of the base region. Transistor lasers (TL) have been recently received con- siderable attentions due to their promising applications in photonic and optoelectronic circuits [1]. Incorporated within the base region of the TL is one (or more) quan- tum wells QW, which plays an important role in device behavior. Using carrier confinement within the QW re- gion, stimulated emission in room temperature with lower threshold current density can be achieved. Re- cently, multiple QW-TLs have been shown for their su- perior optical and electrical performances. Among other key structural factors affecting on the device perform- ance is the position of the active region [2]. Since the first successful demonstration of the laser emission (1μm wavelength) at room temperature in 2