CIGS电池效率20.3 % ZSW 记录保持者.pdfVIP

PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATIONS Prog. Photovolt: Res. Appl. 2011; 19:894–897 Published online 5 January 2011 in Wiley Online Library (). DOI: 10.1002/pip.1078 PAPER PRESENTED AT 25th EU PVSEC WCPEC-5, Valencia, Spain, 2010 New world record efficiency for Cu(In,Ga)Se2 thin-film solar cells beyond 20% Philip Jackson*, Dimitrios Hariskos, Erwin Lotter, Stefan Paetel, Roland Wuerz, Richard Menner, Wiltraud Wischmann and Michael Powalla Zentrum fuer Sonnenenergie- und Wasserstoff-Forschung, Baden-Wuerttemberg (ZSW), Germany ABSTRACT In this contribution, we present a new certified world record efficiency of 20.1 and 20.3% for Cu(In,Ga)Se2 thin-film solar cells. We analyse the characteristics of solar cells on such a performance level and demonstrate a high degree of reproducibility. Copyright # 2011 John Wiley Sons, Ltd. KEYWORDS Cu(In,Ga)Se2 (CIGS); record efficiency; thin-film solar cells *Correspondence Philip Jackson, Zentrum fuer Sonnenenergie- und Wasserstoff-Forschung, Baden-Wuerttemberg (ZSW), Germany. E-mail: philip.jackson@zsw-bw.de Received 7 May 2010; Revised 15 October 2010 1. INTRODUCTION and a highly standardised process sequence constitute this approach. The cell setup can be described as follows: Cu(In,Ga)Se2 (CIGS) has gained a reputation as the soda-lime glass (3 mm), sputtered molybdenum (500– thin-film solar cell technology with the highest efficiencies. 900 nm), CIGS (2.5–3.0 mm), chemical bath deposited CdS Only recently the highest efficiency obtained in a buffer layer (40–50 nm), sputtered undoped ZnO (50– laboratory environment was 19.9% [1] (corrected with 100 nm), sputtered aluminium doped ZnO (150–200 nm) the new solar spectrum to 20.0%). After the market