Analysis of Electrical Characteristics of Photovoltaic Single Crystal Silicon Solar Cells at Outdoor Measurements英文文献资料.docVIP

Smart Grid and Renewable Energy, 2011, 2, 169-175 169 doi:10.4236/sgre.2011.22020 Published Online May 2011 (http://www.SciRP.org/journal/sgre) Analysis of Electrical Characteristics of Photovoltaic Single Crystal Silicon Solar Cells at Outdoor Measurements A. Ibrahim Physics Department, Faculty of Science, Tanta University, Tanta, Egypt. Email: ali_02us@ Received April 28 , 2011; revised May 13 , 2011; acceped May 16 , 2011. th th th ABSTRACT The electrical performance of a photovoltaic (PV) silicon solar cell is described by its current–voltage (I–V) character- istic curve, which is in turn determined by device and material properties. In this study, an investigation of the perform- ance and device parameters of photovoltaic single crystalline silicon (Si) solar cell of the construction n+pp++ PESC (Passivatted Emitter Solar Cell) at different conditions of solar irradiance, title angle and mirror boosting effects had been studied. Also the paper reports on the performance data of the Si cell, using standard I–V characteristic curves to obtain output parameters and to show that there are possible performance degrading defects presents. Keywords: Silicon Solar Cells, I-V Characteristics, Performance Analyses, Outdoor Parameters, Mirror Boosting 1. Introduction parameters such as diode saturation current, diode ideal- ity photo generated current and the presence of parasitic resistances (series and shunt resistance). These parameters depend, in turn, on the solar cell structure, material prop- erties and operating conditions. Photovoltaic (PV) mod- ules, which generally consist of a set of series-connected solar cells, are rated at the maximum power output under standard test conditions (STC): 25?C, 1 kW/m2, AM 1.5 global spectrum. The analysis of I–V characteristics at STC allows the determination of additional