Barrier Inhomogeneity and Electrical Properties of InN NanodotsSi Heterojunction Diodes英文文献资料.docVIP

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Barrier Inhomogeneity and Electrical Properties of InN NanodotsSi Heterojunction Diodes英文文献资料.doc

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Barrier Inhomogeneity and Electrical Properties of InN NanodotsSi Heterojunction Diodes英文文献资料

HindawiPublishingCorporation JournalofNanomaterials Volume2011,ArticleID189731,7pages doi:10.1155/2011/189731 ResearchArticle BarrierInhomogeneityandElectricalPropertiesof InNNanodots/SiHeterojunctionDiodes MohanaK.Rajpalke, MaheshKumar,1,2BasantaRoul,1,2ThirumaleshwaraN.Bhat,1 1 2 1 A.T.Kalghatgi, andS.B.Krupanidhi 1 2 MaterialsResearchCentre,IndianInstituteofScience,Bangalore560012,India CentralResearchLaboratory,BharatElectronics,Bangalore560013,India CorrespondenceshouldbeaddressedtoS.B.Krupanidhi,sbk@mrc.iisc.ernet.in Received25July2011;Accepted28August2011 AcademicEditor:ZhiLiXiao Copyright?2011MaheshKumaretal. This is an open access article distributed under the Creative Commons Attribution License,whichpermitsunrestricteduse,distribution,andreproductioninanymedium,providedtheoriginalworkisproperly cited. Theelectricaltransportbehaviorofn-nindiumnitridenanodot-silicon(InNND-Si)heterostructureSchottkydiodesisreported here,whichhavebeenfabricatedbyplasma-assistedmolecularbeamepitaxy.InNNDstructuresweregrownona20nmInNbu?er layeronSisubstrates.Thesedotswerefoundtobesinglecrystallineandgrownalong[0001]direction.Temperature-dependent currentdensity-voltageplots(J-V-T)revealthattheidealityfactor(η)andSchottkybarrierheight(SBH)(ΦB)aretemperature dependent.TheincorrectvaluesoftheRichardsonconstant(A oftheexperimentalresultswereexplainedbyusingtwomodels.Firstoneisbarrierheightinhomogeneities(BHIs)model,in whichconsideringane?ectiveareaoftheinhomogeneouscontactprovidedaprocedureforacorrectdeterminationofA .The Richardsonconstantisextracted～110Acm?2 ?2usingtheBHImodelandthatisinverygoodagreementwiththetheoretical valueof112Acm?2 ?2.ThesecondmodelusesGaussianstatisticsandbythis,meanbarrierheightΦ0andA werefoundtobe 0.69eVand113Acm?2 ?? )producedsuggestaninhomogeneousbarrier.Descriptions ?? K K ?? K ?2 ,respectively. 1.Introduction based devices and their behavior at di?erent temperatures priortotheirado