Optimization of Urea-EnFET Based on Ta2O5 Layer with Post Annealing 英文参考文献.docVIP

Sensors 2011, 11, 4562-4571; doi:10.3390/s110504562 OPEN ACCESS sensors ISSN 1424-8220 /journal/sensors Article Optimization of Urea-EnFET Based on Ta2O5 Layer with Post Annealing Cheng-En Lue 1, Ting-Chun Yu 1, Chia-Ming Yang 2, Dorota G. Pijanowska 3 and Chao-Sung Lai 1,4, * 1 Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1 st road, Kwei-Shan, Tao-Yuan, 333, Taiwan; E-Mail: yolue411@ (C.-E.L.); nan.fttt18@ (T.-C.Y.) 2 Device Section, Department of WAT and Devices, Inotera Memories Inc., 667 Fuhsing 3 rd Road, Hwa-Ya Technology Park, Kwei-Shan, Tao-Yuan, 333, Taiwan; E-Mail: charming2006@ 3 4 Institute of Biocybernetics and Biomedical Engineering, Polish Academy of Sciences, Ul. Ks. Trojdena 4, 02-109 Warsaw, Poland; E-Mail: dpijanowska@ibib.waw.pl Biosensor Group, Biomedical Engineering Research Center, Chang Gung University, 259 Wen-Hwa 1 st road, Kwei-Shan, Tao-Yuan, 333, Taiwan * Author to whom correspondence should be addressed; E-Mail: cslai@.tw; Tel.: +886-3-211-8800 ext. 5607; Fax: +886-3-211-8507. Received: 4 March 2011; in revised form: 30 March 2011 / Accepted: 11 April 2011 / Published: 27 April 2011 Abstract: In this study, the urea-enzymatic field effect transistors (EnFETs) were investigated based on pH-ion sensitive field effect transistors (ISFETs) with tantalum pentoxide (Ta2O5) sensing membranes. In addition, a post N2 annealing was used to improve the sensing properties. At first, the pH sensitivity, hysteresis, drift, and light induced drift of the ISFETs were evaluated. After the covalent bonding process and urease immobilization, the urea sensitivity of the EnFETs were also investigated and compared with the conventional Si3N4 sensing layer. The ISFETs and EnFETs with annealed Ta2O5 sensing membranes showed the best responses, including the highest pH sensitivity (56.9 mV/pH, from pH 2 to pH 12) and also corresponded to the highest urea