Characterization, Modeling and Design Parameters Identification of Silicon Carbide Junction Field Effect Transistor for Temperature Sensor Applications.docVIP

Sensors 2010, 10, 388-399; doi:10.3390/s100100388 OPEN ACCESS sensors ISSN 1424-8220 /journal/sensors Article Characterization, Modeling and Design Parameters Identification of Silicon Carbide Junction Field Effect Transistor for Temperature Sensor Applications Tarek Ben Salah 1,2,*, Sofiane Khachroumi 2 and Hervé Morel 1 1 Ampere, CNRS UMR 5005, INSA de Lyon, batiment Léonard de Vinci, 69621 Villeurbanne, France; E-Mail: herve.morel@insa-lyon.fr 2 Electrical System Laboratory, UR03ES05, ENIT, Tunis, BP 37, le Belvédère, 1002 Tunis, Tunisia; E-Mail: sofianekha204@ * Author to whom corresp