薄膜电子学的应用.ppt

FBAR Film Bulk Acoustic Resonator Agilent FBAR双工器实物剖析 ST在ISSCC 2005上发布全球第一款集成FBAR滤波器的WCDMA接收IC，采用GeSi:C BiCMOS工艺，AlN作压电薄膜 三种主流结构的FBAR 空气隙FBAR的制备工艺 表面微机械工艺，需要 CMP 处理 固态装配型FBAR制备工艺 需要制备多层高低阻抗交替的声学层作为布拉格反射层用，且每层厚度需精确控制在四分之一波长 硅反面刻蚀型FBAR制备工艺 Linear Momentum Gauss Law in Piezoelectric Electromechanical Constitutive Eqs. Wave Equation 0 z air air Φ x One-Dimensional FBAR Model Stress and displacement continuous at the boundaries between layers Zero stress on free surfaces Pt AlN Al PM film reflected incident FBAR Impedance from Cascaded ABCD Matrices Stress = Voltage Velocity = Current MBVD model