高亮度顶发射单色绿光OLED微显示器件制备.pdfVIP

37 12 Vol.37 No.12 2015 12 Infrared Technology Dec. 2015 OLED 1,2 1,2 1 1,2 1,2 1,2 1,2 1,2 1 1,2 1. 650223 2. 650223 SVGA060 CMOS 535 nm 0.6 800600 2 2 2 OLED 20000 cd/m 2.6 V 20 cd/m 20000 cd/m 2.7 V 24.43 cd/A20 mA/cm2 CIEX 0.286 CIEY 0.6651000 cd/m2 500 cd/m2 42559 h 186208h OLED O482.3 A 1001-8891(2015)12-1022-05 Fabrication of High Brightness Top-emitting Green OLED Micro-display 1,2 1,2 1 1,2 1,2 DUAN Yu ZHANG Xiao-dan SUN Hao ZHU Ya-an WANG Guang-hua 1,2 1,2 1,2 1 1,2 SONG Li-yuan YU Xiao-hui WAN Rui-min JI Hua-xia LI Ya-wen (1.Yunnan Olightek Opto-electronic technology Co., Ltd. , Kunming 650223, China; 2.Kunming Institute of Physics, Kunming 650223, China) Abstract A high brightness, 0.6 inch, 800600, mono green OLED micro-display, which based on phosphorescent materials, high efficient top-emitting structure and SVGA060 si-base CMOS backplane with full digital system driver circuit have been fabricated. The voltage of device start working is only 2.6 V, and 2 2 2 the voltage swing as low as 2.7 V from 20 cd/m to 20000 cd/m . When current density is 20 mA/cm , the green emission with peak at 535 nm and CIE coordinates X 0.286, Y0.665. The maximun current