结晶过程原理1112+1314学时.pptVIP

* Crystal growth, along with nucleation, controls the final crystal size distribution obtained in the system. In addition, the conditions and rate of crystal growth have a significant impact on the product purity and the crystal habit. An understanding of crystal growth theories is very important. Note that only the face growth rate (the rate of growth of a face in the direction normal to the face) can be related directly to fundamental theories of crystal growth. In other words, these crystal growth theories are based on the layer-by-layer growth fashion. This can be understood by looking at the Figure. In this Figure, we can see three possible sites for the molecule to incorporate into the crystal surface. The sites of A, B, and C can be distinguished by the number of bonds the molecule will form with the crystal. At site A, the molecule will be attached only to the surface of a growing layer while at site B, the molecule is attached to both the surface and to a growing step. At site C, the molecule is attached at three surfaces at what is known as a kink site. From an energetic point of view, C is more favorable than B, and B more favorable than A. This can be generalized by saying that molecules tend to bond at locations where they have the maximum number of nearest neighbors. These are the most energetically favorable sites. The general mechanism for incorporation of a molecule into a crystal face is its adsorption onto the surface followed by its diffusion along the surface to a kink (C-type) or step (B-type) site for incorporation. 2.线缺陷 线缺陷是指二维尺度很小而另一维尺度很大的缺陷。它包括各种类型的位错。所谓位错是指晶体中一部分晶体相对另一部分晶体发生了一列或若干列原子有规律的错排现象。最典型为刃型位错。 5 二维生长机理 3.面缺陷 面缺陷是指二维尺度很大而另一尺度很小的缺陷。金属晶体中的面缺陷主要有晶界和亚晶界。 晶粒与晶粒之间的接触界面称为晶界。如图（a)所示。亚晶粒之间的交界称为亚晶界。如图(b)所示。 晶界、亚晶界处具有许多特殊性能。 5 二维生长机理 蒲永平编，《功能材料的缺陷化学》 或相关材料化学方面的书籍。 附加——晶体缺陷 5 二维生长机理 由螺旋位错而发生的晶体生长的线生长速率 在较高的过饱和度下（过饱和度≥ 0.1%或S≥ 1.001） 5 二维生长机理 在较低的过饱和度下（过饱和度＜ 0.1%或S＜ 1.001） 在式4-3和4-4中： 5 二维生长机理 上述机理并不能涵